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SOT-363-6
SOT-363-6
The SOT-363-6 (Small Outline Transistor, 6 leads) is a surface-mount package designed for high-density circuits. Featuring an ultra-compact footprint, a leadless design, and a thermally-enhanced bottom metal pad, it delivers significant space savings on the PCB, improved thermal dissipation, and reduced parasitic inductance. Typical dimensions are approximately 1.6 mm x 1.2 mm with a 0.5 mm pin pitch and a 0.7 mm profile height, making it ideal for RF amplifiers and switches, power management ICs in portable devices, and compact sensor modules. Its bottom-terminal contacts enable direct PCB thermal transfer, while RoHS-compliant materials ensure reliability in industrial environments.
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5A 9.8V 100W 7.2V 5V SOT-363-6 Electrostatic and Surge Protection (TVS/ESD) ROHS
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 4174
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NPN+NPN DIGITAL TRANSISTOR (CORR
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 8578
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PNP+NPN DIGITAL TRANSISTOR (WITH
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 7807
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MOSFET
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 7497
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IC AMP CELL 50MHZ-6GHZ SC70-6
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 6754
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MOSFET 2N-CH 30V 0.22A SOT363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 8594
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Inverter Schmitt Trigger 2-Element CMOS Automotive 6-Pin TSSOP T/R
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1 + 10 + 25 + 50 + >=100 -
Stock : 1
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Flip Flop D-Type Pos-Edge 1-Element Automotive 6-Pin TSSOP T/R
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 33000
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Schmitt Trigger Buffer 2-CH Non-Inverting CMOS 6-Pin SOT-363 T/R
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 15
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Circuiti integrati (CI)
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 1000
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MCH6661 Series 30 V 188 mOhm SMT Dual N-Channel Power Mosfet - SOT-363
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1 + 10 + 25 + 50 + >=100 -
Stock : 1
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Semiconduttori discreti
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 3000
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20V 810mA 310mW 310mΩ@4.5V,550mA 850mV@250uA 2 N-Channel SOT-363-6 MOSFETs ROHS
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 6550
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RF Wireless Misc 3V Med Pwr Amplifier
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1 + 10 + 25 + 50 + >=100 -
1
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RF Wireless Misc Lo Current Amplifier
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1 + 10 + 25 + 50 + >=100 -
1
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IC MMIC AMP 6-SUPER MINIMOLD,RF Wireless Misc Wideband Output
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1 + 10 + 25 + 50 + >=100 -
1
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IC MMIC AMP 6-SUPER MINIMOLD,RF Wireless Misc Medium Output Power
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 41
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IC MMIC AMP 6-SUPER MINIMOLD,RF Wireless Misc Medium Output Power
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1 + 10 + 25 + 50 + >=100 -
1
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RF Amp Single GP 3200MHz 5.5V 6Pin SOT-363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 5000
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RF Amp Single Power Amp 3200MHz 5.5V 6Pin SOT-363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 24000
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IC MMIC AMP 2.9GHZ 6-SMINI,RF Wireless Misc 5V Widebnd Amplifier
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1 + 10 + 25 + 50 + >=100 -
1
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RF Wireless Misc 3V Med Pwr Amplifier
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 10000
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RF Amp Chip Single Power Amp 2.9GHz 3.3V 6-Pin SOT-363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 10000
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RF Amp Single GP 2900MHz 3.3V 6Pin SOT-363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 3689
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RF Amp Single GP 1500MHz 3.3V 6Pin SOT-363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 24000
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RF Wireless Misc 3V Widebnd Amplifier
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 10000
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RF Wireless Misc 5V Widebnd Amplifier
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 10000
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RF Wireless Misc 5V Widebnd Amplifier
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 10000
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RF Amp Single Power Amp 1GHz 5.5V 6Pin SOT-363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 10000
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RF Amp Single Power Amp 2300MHz 5.5V 6Pin SOT-363
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 24000
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RF Wireless Misc 5V Wideband RFIC Amp
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 5000
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RF Amplifier DC-6GHz NF 3.9dB Gain 20.6dB 50 Ohm
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 3000
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RF Amplifier DC-6GHz NF 3.6dB Gain 15.3dB 50 Ohm
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 435
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MOSFET 20V 0.25A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 3000
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MOSFET 20V .25/.18A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 45800
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MOSFET, DUAL, N, SC-70; Transistor type:MOSFET; Current, Id cont:1.3A; Resistance, Rds on:0.19R; Case style:SOT-323 (SC-70); Base number:1972; Charge, gate n-channel:0.91nC; Current, Idm pulse:4A; Pins, No. of:6; Power RoHS Compliant: Yes,MOSFET DUAL N-CH 30V(D-S)
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 63300
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MOSFET, DUAL, N, SC-70; Transistor type:MOSFET; Current, Id cont:1.3A; Resistance, Rds on:0.225R; Case style:SOT-323 (SC-70); Base number:1970; Charge, gate n-channel:1.15nC; Current, Idm pulse:4A; Pins, No. of:6; Power RoHS Compliant: Yes,MOSFET DUAL N-CH 30V(D-S)
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 688000
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MOSFET, DUAL, N, SC-70; Transistor type:MOSFET; Current, Id cont:1.3A; Resistance, Rds on:0.205R; Case style:SOT-323 (SC-70); Base number:1958; Charge, gate n-channel:1.2nC; Current, Idm pulse:4A; Pins, No. of:6; Power RoHS Compliant: Yes,MOSFET DUAL N-CH 20V(D-S)
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 63300
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MOSFET P-CH DUAL 12V SC70-6
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 71830
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MOSFET 10V 1.15A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 8537
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MOSFET 20V 1.0A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 63300
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MOSFET 20V 1.0A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 3000
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MOSFET DUAL P-CH 20V (D-S)
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 688000
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MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:1.28A; On-Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-363; Leaded Process Compatible:Yes,
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 300000
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MOSFET 20V 1.28A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 17488
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MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:0.53A; On-Resistance, Rds(on):0.65ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-SC-70; Leaded Process Compatible:Yes,MOSFET 12V 0.56A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 8000
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MOSFET 12V 0.56A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 132000
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Semiconduttori discreti
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 640
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MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:0.57A; On-Resistance, Rds(on):0.6ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-SC-70; Leaded Process Compatible:Yes,MOSFET 8V 0.6A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 75800
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MOSFET 8V 0.6A
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1 + 10 + 25 + 50 + >=100 -
Minimo : 1 Stock : 208
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Q:What defines the physical structure of SOT-363-6?
A:Key features include:
- Leadless bottom-mounted pads for compact PCB attachment.
- Central thermal pad (60% substrate coverage) for enhanced heat dissipation.
- 6-pin layout with dual-row symmetrical arrangement.
- 1.0 mm ultra-thin profile for space-constrained designs. -
Q:Why choose SOT-363-6 over alternatives?
A:Critical advantages:
- Miniaturization: 40% smaller than SOT-23-6 with equivalent functionality.
- Thermal Performance: Direct PCB heat path via exposed pad reduces junction temperature by 15%.
- Electrical Benefits: Low-inductance design (<0.5 nH) for high-frequency stability.
- Reliability: Moisture-resistant (MSL3-rated) substrate for harsh environments. -
Q:What are common technical specs?
A:Standard configurations (consult datasheets):
- Body Size: 2.1 × 1.25 mm
- Height: 1.0 mm
- Pin Pitch: 0.65 mm
- Material: Copper-alloy leads with Ni/Pd/Au plating.
- Temp Range: -40°C to +125°C. -
Q:Where is SOT-363-6 typically applied?
A:Dominant use cases:
- Power Converters: Buck/boost ICs (e.g., TPS61021).
- RF Modules: Low-noise amplifiers (e.g., BGA2818).
- Sensor Interfaces: IoT signal conditioning (e.g., LMT84 temperature sensor). -
Q:What are critical assembly guidelines?
A:Key recommendations:
- PCB Design: 4×4 thermal vias under pad (0.3 mm diameter).
- Solder Paste: Type 4 solder (particle size 20–38 μm).
- Reflow Profile: Peak temp ≤ 245°C (Pb-free process).
- Inspection: X-ray (AXI) mandatory for pad void detection.